10v drive nch mosfet SP8K80 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) built-in g-s protection diode. 2) small surface mount package(sop8). ? application switching ? packaging specifications ? inner circuit package taping code tb basic ordering unit (pieces) 2500 SP8K80 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 500 v gate-source voltage v gss ? 30 v continuous i d ? 0.5 a pulsed i dp ? 2a continuous i s 0.5 a pulsed i sp 2a avalanche current i as 0.25 a avalanche energy e as 0.017 mj power dissipation p d 2w channel temperature t ch 0.2 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25c *3 limited only by maximum channel temperature allowed. *4 mounted on a ceramic board. type source current (body diode) drain current parameter *2 *2 *3 *4 *3 *1 *1 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?2 ?1 ?2 ?1 (8) (7) (1) (2) (6) (5) (3) (4) ? 1 esd protection diode ? 2 body diode sop8 (1) (8) (5) (7) (6) (4) (2) (3) (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain 1/6 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. www.datasheet.co.kr datasheet pdf - http://www..net/
SP8K80 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 500 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =500v, v gs =0v gate threshold voltage v gs (th) 3.0 - 5.0 v v ds =10v, i d =1ma forward transfer admittance l y fs l 0.1 - - s v ds =10v, i d =0.25a input capacitance c iss - 23.5 - pf v ds =25v output capacitance c oss - 36.5 - pf v gs =0v reverse transfer capacitance c rss - 2.4 - pf f=1mhz turn-on delay time t d(on) - 10 - ns v dd 250v, i d =0.25a rise time t r - 18 - ns v gs =10v turn-off delay time t d(off) - 25 - ns r l =1000 ? fall time t f - 170 - ns r g =10 ? total gate charge q g - 3.8 - nc v dd 250v gate-source charge q gs - 1.3 - nc i d =0.5a gate-drain charge q gd - 1.6 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =0.25a, v gs =0v *pulsed 9.0 11.7 parameter conditions conditions ? parameter static drain-source on-state resistance r ds (on) i d =0.25a, v gs =10v - * * * * * * * * * * 2/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
SP8K80 ? electrical characteristic curves (ta=25 ? c) 0 0.02 0.04 0.06 0.08 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =4.5v v gs =5.0v v gs = 10.0 v v gs =6.0v v gs =7.0v v gs =8.0v v gs =6.5v ta=25 c pulsed 0.0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 6 7 8 9 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =10.0v v gs =5.0v v gs =6.0v v gs =4.5v v gs =7.0v v gs =8.0v v gs =6.5v ta=25 c pulsed 0.001 0.01 0.1 1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 drain currnt : i d [a] gate - source voltage : v gs [v] fig.3 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 2 3 4 5 6 -50 0 50 100 150 gate threshold voltage : v gs(th) [v] channel temperature : t ch [ ] fig.4 gate threshold voltage vs. channel temperature v ds =10v i d =1ma pulsed 1 10 100 0.01 0.1 1 static drain - source on - state resistance r ds(on) [ ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 5 10 15 20 25 -50 0 50 100 150 static drain - source on - state resistance : r ds(on) [ ] channel temperature : t ch [ ] fig.6 static drain - source on - state resistance vs. channel temperature v gs =10v pulsed i d =0.25a i d =0.50a 3/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
SP8K80 0.001 0.01 0.1 1 0.001 0.01 0.1 1 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 0 0.5 1 1.5 2 source current : i s [a] source - drain voltage : v sd [v] fig.8 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 static drain - source on - state resistance r ds(on) [ w ] gate - source voltage : v gs [v] fig.9 static drain - source on - state resistance vs. gate - source voltage i d =0.5a i d =0.25a ta=25 c pulsed 1 10 100 1000 10000 0.01 0.1 1 switching time : t [ns] drain current : i d [a] fig.10 switching characteristics t d(on) t r t d(off) t f v dd P 250v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 12 0 1 2 3 4 5 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.11 dynamic input characteristics t a =25 c v dd =250v i d =0.5a pulsed 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : v ds [v] fig.12 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 4/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
SP8K80 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.13 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse:1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) 10 100 1000 0.1 1 reverse recovery time : t rr [ns] source current : i s [a] fig.15 reverse recovery time vs. source current t a =25 c di/dt=50a/ s v gs =0v pulsed 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse:1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 5/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
SP8K80 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 6/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes www.datasheet.co.kr datasheet pdf - http://www..net/
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